STUDY THE MOBILITIES OF CARRIERS DEPENDENT ON TEMPERATURE IN GE CHANNEL MODULATION-DOPED STRUCTURES

Abstract

In this paper we calculate the temperature dependent part of the hall mobility in Ge channel modulation-doped structures with very high room-temperature. At high temperatures, we were able to derive the autocorrelation functions for the distribution of carriers and their scattering mechanisms. We incorporate all possible main scattering mechanisms, especially acoustic-phonon scattering. It is shown that surface-roughness and acoustic-phonon scattering play a dominant role in limiting the mobility. We analyzed the behavior of the mobility for temperature values up to 300K. Our theory is able to well reproduce the experimental data about the transport of holes in Ge channel modulation-doped structures from 50^oK to 300^oK.