Transparent conducting ZnO:In thin films prepared by magnetron DC sputtering method

Abstract

ZnO:In thin films was deposited on glass substrate by magnetron DC sputtering method from ceramic target. The  ZnO:In ceramic targets have concentrations of In₂O₃ varying between 1 and 4wt%. The ZnO:In film has the resistivity with value of 1.79 x 10^-3 Ωcm,  at a layer thickness of about 1µm, corresponding with ZnO:In target (2%wt In₂O₃), at the substrate temperature of about 240­⁰C. All ZnO:In thin films have the transparence above 85% in the visible spectra.