Enhancement of thermoelectric power factor in Si-doped Mg3Sb2 compound for thermoelectric converting applications

Abstract

Mg₃Sb₂ is a narrow band gap semiconductor with electrical conductivity and thermoelectric properties dependent on structure and doping elements. In this study, to improve the thermoelectric properties of Mg₃Sb₂, the authors doped Si at different ratios (x=0.05, 0.1, 0.15, 0.25, and 0.3) into Sb sites as the formula Mg₃Sb₂-xSix to improve the electrical conductivity of doping samples while maintaining a high value of the Seebeck coefficient...