Analysis of a novel 3C-SiC thin layer on silicon diaphragms for enhanced stress amplification in MEMS piezoresistive pressure sensors

Các tác giả

  • Nguyen Chi Cuong*, Trinh Xuan Thang, Lam Minh Thinh, Vuong Dinh Duy Phuc, Truong Huu Ly, Ngo Vo Ke Thanh, Le Quoc Cuong

Từ khóa:

Tóm tắt

This study analyses the square diaphragm structure of a micro-electro-mechanical system (MEMS) pressure sensor using the finite element method (FEM). The research investigates an enhancement in stress distribution achieved by coating a silicon (Si) diaphragm with a thin layer of silicon carbide (3C-SiC)...

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Tiểu sử tác giả

  • Nguyen Chi Cuong*, Trinh Xuan Thang, Lam Minh Thinh, Vuong Dinh Duy Phuc, Truong Huu Ly, Ngo Vo Ke Thanh, Le Quoc Cuong

    Research Laboratories of Saigon High-Tech-Park, Lot I3, N2 Street, Saigon High-Tech-Park, District 9, Ho Chi Minh City, Vietnam

Đã Xuất bản

2024-09-14

Số

Chuyên mục

PHYSICAL SCIENCES