Analysis of a novel 3C-SiC thin layer on silicon diaphragms for enhanced stress amplification in MEMS piezoresistive pressure sensors
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Tóm tắt
This study analyses the square diaphragm structure of a micro-electro-mechanical system (MEMS) pressure sensor using the finite element method (FEM). The research investigates an enhancement in stress distribution achieved by coating a silicon (Si) diaphragm with a thin layer of silicon carbide (3C-SiC)...
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Đã Xuất bản
2024-09-14
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Chuyên mục
PHYSICAL SCIENCES