FABRICATION AND STUDY OF THE OPTICAL PROPERTIES OF Eu3+-DOPED ZnSe SEMICONDUCTOR QUANTUM DOTS, APPLICATION IN LIGHTING

Abstract

This paper presents the process of fabrication and study of the structure and optical properties of ZnSe quantum dots doped with Eu³⁺ ions at concentrations of 0%, 1%, 3%, and 5%. The purpose of this paper is to investigate the influence of Eu³⁺ ion concentration on the structure, absorption, and fluorescence emission properties of the material. The samples were synthesized by wet chemical method and studied by X-ray diffraction (XRD), compositional analysis (EDX), UV-Vis absorption spectroscopy, fluorescence excitation spectroscopy, and photoluminescence (PL) spectroscopy. The XRD results showed that all samples had cubic crystal structures. The UV-Vis absorption spectra showed a shift of the absorption peak toward longer wavelengths when the Eu³⁺ concentration increased, demonstrating the influence of Eu³⁺ ions on the energy band structure of ZnSe QDs. The PL spectra of Eu³⁺-doped ZnSe QDs showed characteristic emission of Eu³⁺ ions and broadened emission band toward red light compared to undoped ZnSe QDs. This result shows the potential application of Eu³⁺-doped ZnSe QDs in the field of lighting.