FABRICATION OF UV PHOTODETECTOR BASED ON P-N HECTEROJUNCTION USING TIO2, NIO AND CARBON MATERIALS

Abstract

In this study, UV detector device based on the photoconductive effect of some wide bandgap semiconductors such as titanium dioxide (TiO2), nickel oxide (NiO) are fabricated by all solution process. The final device has a bottom-up structure of FTO/TiO₂/NiO/Carbon, respectively. The 365 nm LED light source has been irradiated  for the sensitivity and the Volt-Ampere (I-V) characteristic of the device. The measurement parameter such as: Responsivity (R) = 17.5 (at 0V) and R=250 (at 0.5V); The detection index is also very high with D = 10¹³ Jones; response time τ_r = 0.35 s and decay time τ_f=0.3 s; open circuit voltage Voc = 0.45 V. Actual performance of the device is verified by connecting a motor in series (1 V and 30 mA). All the obtained results show that the highly sensitive components produced by the team are capable of self-powered operation and most importantly, have high applicability in many areas of life.