CALCULATION AND ANALYSYS OF ELECTRON TRANSPORT COEFFICIENTS IN TRIES-N2 GAS MIXTURES

Abstract

The electron transport coefficients in gases or gas mixtures are important data for plasma modeling. The pure triethoxysilane (TRIES) and pure N₂ are widely used in various plasma processing such as doping plasma, plasma etching and plasma-enhanced chemical vapor deposition. In order to improve the quality of plasma processing, the TRIES-N₂ mixture was suggested. Therefore, the determination of the electron transport coefficients in TRIES-N₂ mixtures with different mixing ratio are necessary. In this study, the electron transport coefficients, which include the electron drift velocities, the density-normalized longitudinal diffusion coefficients and the Townsend first ionization coefficients in TRIES and its mixture with N₂, were firstly calculated and analyzed using a Boltzmann two-term calculation. This study was carried out in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (1 Td = 10⁻¹⁷ V cm²) based on the reliable electron collision cross section sets for TRIES and N₂ molecules. These results are necessary for plasma processing using the TRIES-N₂ mixtures.